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參數(shù)資料
| 型號： | K8D1716UTC-PI08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 1,600位（200萬x8/1M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 25/41頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K8D1716UTC-PI08 |
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FLASH MEMORY
K8D1716UTC / K8D1716UBC
Revision 1.0
December 2004
25
DC CHARACTERISTICS
RECOMMENDED OPERATING CONDITIONS
( Voltage reference to Vss )
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.0
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
Notes
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on
input / output pins is Vcc+0.5V which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Minimum DC voltage is -0.5V on A9, OE, RESET and WP/ACC pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC
voltage on A9, OE, RESET pins is 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc
-0.5 to +4.0
V
A9, OE , RESET
V
IN
-0.5 to +12.5
WP/ACC
-0.5 to +12.5
All Other Pins
-0.5 to +4.0
Temperature Under Bias
Commercial
T
bias
-10 to +125
°
C
Industrial
-40 to +125
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Operating Temperature
T
A
(Commercial Temp.)
0 to +70
°
C
T
A
(Industrial Temp.)
-40 to + 85
°
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
1.0
-
+
1.0
μ
A
A9,OE,RESET Input Leakage
Current
I
LIT
V
CC
=V
CCmax
, A9,OE,RESET=12.5V
-
-
35
μ
A
WP/ACC Input Leakage Current
I
LIW
V
CC
=V
CCmax
, WP/ACC=12.5V
-
-
35
μ
A
Output Leakage Current
I
LO
V
OUT
=V
SS
to V
CC
,V
CC
=V
CCmax
,OE=V
IH
1.0
-
+
1.0
μ
A
Active Read Current (1)
I
CC
1
CE=V
IL
, OE=V
IH
5MHz
-
14
20
mA
1MHz
-
3
6
Active Write Current (2)
I
CC
2
CE=V
IL
, OE=V
IH,
WE=V
IL
-
15
30
mA
Read While Program Current
(3)
I
CC
3
CE=V
IL
, OE=V
IH
-
25
50
mA
Read While Erase Current (3)
I
CC
4
CE=V
IL
, OE=V
IH
-
25
50
mA
Program While Erase Suspend
Current
I
CC
5
CE=V
IL
, OE=V
IH
-
15
35
mA
ACC Accelerated Program
Current
I
ACC
CE=V
IL
, OE=V
IH
ACC Pin
-
5
10
mA
Vcc Pin
-
15
30
Standby Current
I
SB
1
V
CC
=V
CCmax
,CE, RESET=V
CC
±
0.3V
WP/ACC= V
CC
±
0.3V or Vss
±
0.3V
V
CC
=V
CCmax
, RESET=Vss
±
0.3V,
WP/ACC=V
CC
±
0.3V or Vss
±
0.3V
V
IH
=V
CC
±
0.3V, V
IL
=V
SS
±
0.3V,
OE=V
IL,
I
OL
=I
OH
=0
-
5
18
μ
A
Standby Current During Reset
I
SB
2
-
5
18
μ
A
Automatic Sleep Mode
I
SB
3
-
5
18
μ
A
Input Low Level
V
IL
-0.5
-
0.8
V
Input High Level
V
IH
0.7xVcc
-
V
CC
+0.3
V
Voltage for WP/ACC Block Tempo-
rarily Unprotect and Program Accel-
eration (4)
V
HH
V
CC
= 3.0V
±
0.3V
8.5
-
12.5
V
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相關代理商/技術參數(shù) |
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|---|---|
| K8D1716UTC-PI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
| K8D1716UTC-TI07 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory |
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