參數(shù)資料
型號(hào)： K9E2G08U0M-Y
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bits NAND Flash Memory
中文描述： 256M x 8位NAND閃存
文件頁(yè)數(shù)： 36/38頁(yè)
文件大小： 888K
代理商： K9E2G08U0M-Y
FLASH MEMORY
36
K9E2G08U0M
Preliminary
Figure 21-2. Read ID (2) Operation
CE
CLE
I/O
0
~
7
ALE
RE
WE
91h
00h
20h
Address. 1cycle
Extended ID Code
t
CEA
t
AR
t
REA
t
WHR
Figure 22. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 22 below.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
Table5. Device Status
t
RST
相關(guān)PDF資料
PDF描述
K9E2G08U0M-F 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P 256M x 8 Bits NAND Flash Memory
K9F1208D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0A-P TV 128C 128#22D PIN RECP
K9F1208D0A-Y TV 128C 128#22D PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208B0B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208B0C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1208B0C-P 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208D0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0A-P 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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