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參數(shù)資料
| 型號： | K9F1208U0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 1/41頁 |
| 文件大?。?/td> | 1139K |
| 代理商： | K9F1208U0 |
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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
1
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No
0.0
0.1
0.2
0.3
0.4
Remark
Advanced
Information
History
1. Initial issue
1. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
2. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
1. Changed GND input (pin # 6) pin to N.C ( No Connection).
- The pin # 6 is don’t-cared regardless of external logic input level
and is fixed as low internally.
1. Changed plane address in Copy-Back Program
-
A24 and A25
must be the same between source and target page
=>
A14 and A15
must be the same between source and target page
1. Changed DC characteristics
2. Unified access timing parameter definition for multiple operating modes
- Changed AC characteristics (Before)
- AC characteristics (After)
. Deleted t
CR
,t
RSTO,
t
CSTO
and t
READID
/ Added t
CEA
Parameter
Min
Typ
Max
Unit
Operating
Current
Sequential Read
-
10
20->30
mA
Program
-
10
20->30
Erase
-
10
20->30
Parameter
Symbol
Min
Max
Unit
ALE to RE Delay( ID read )
t
AR1
100
-
ns
CE to RE Delay( ID read)
t
CR
100
-
RE Low to Status Output
t
RSTO
-
35
CE Low to Status Output
t
CSTO
-
45
RE access time(Read ID)
t
READID
-
35
Parameter
Symbol
Min
Max
Unit
ALE to RE Delay( ID read )
t
AR1
10
-
ns
CE Access Time
t
CEA
-
45
Draft Date
Oct. 27th 2000
Dec. 5th 2000
Dec. 15th 2000
Jan. 8th 2001
Apr. 7th 2001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208U0M-YIB0 | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0M-YCB0 | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0M- | 64M x 8 Bit NAND Flash Memory |
| K9F1216U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-VIB0T00 | 制造商:Samsung Semiconductor 功能描述: |
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