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參數(shù)資料
| 型號： | K9F1208U0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 6/41頁 |
| 文件大?。?/td> | 1139K |
| 代理商： | K9F1208U0 |
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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
6
64M x 8 Bit NAND Flash Memory
The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash
Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell
provides the most cost-effective solution for the solid state
mass storage market. A program operation can be performed in
typical 200
μ
s on the 528-byte page and an erase operation can
be performed in typical 2ms on a 16K-byte block. Data in the
page can be read out at 50ns cycle time per byte. The I/O pins
serve as the ports for address and data input/output as well as
command inputs. The on-chip write controller automates all
program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even
the write-intensive systems can take advantage of the
K9F1208U0M’s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm. The K9F1208U0M-YCB0/YIB0 is an
optimum solution for large nonvolatile storage applications such
as solid state file storage and other portable applications requir-
ing non-volatility.
General Description
Features
Voltage Supply : 2.7V~3.6V
Organization
- Memory Cell Array : (64M + 2,048K)bit x 8bit
- Data Register : (512 + 16)bit x8bit multipled by four planes
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
- Random Access : 12
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back Operation
Package :
- K9F1208U0M-YCB0, K9F1208U0M-YIB0 :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
Simultaneous Four Page/Block Program/Erase
Pin Configuration
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
48-pin TSOP1
Standard Type
12mm x 20mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
CE
ALE
WE
N.C
N.C
Pin Name
Pin Function
I/O
0
~ I/O
7
Data Input/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
R/B
Ready/Busy output
V
CC
Power(+2.7V~3.6V)
V
SS
Ground
N.C
No Connection
Pin Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208U0M-YIB0 | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0M-YCB0 | 64M x 8 Bit NAND Flash Memory |
| K9F1208U0M- | 64M x 8 Bit NAND Flash Memory |
| K9F1216U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208U0A-VIB0T00 | 制造商:Samsung Semiconductor 功能描述: |
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