參數(shù)資料
型號(hào): K9F1208U0M-YCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 18/41頁
文件大小: 1139K
代理商: K9F1208U0M-YCB0
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
18
System Interface Using CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(4Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
0
~
7
Data Input
CE don’t-care
10h
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Start Add.(4Cycle)
00h
CE
CLE
ALE
WE
I/O
0
~
7
Data Output(sequential)
CE don’t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
Must be held
low during tR.
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