參數(shù)資料
型號: K9F1208U0M-YCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 38/41頁
文件大小: 1139K
代理商: K9F1208U0M-YCB0
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
38
Figure 23. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 4 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 23 below.
After Power-up
After Reset
Operation Mode
Read
Waiting for next command
FFh
I/O
0
~
7
R/B
Table4. Device Status
t
RST
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