參數(shù)資料
型號(hào)： K9F1216X0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： CAT5E PATCH CORD 100MHZ 4 FOOT BLUE
中文描述： 6400 × 8位，32 × 16位NAND閃存
文件頁數(shù)： 3/46頁
文件大?。?/td> 748K
代理商： K9F1216X0A
FLASH MEMORY
3
K9F1208D0A
K9F1208U0A
K9F1216D0A
K9F1216U0A
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200
μ
s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8
device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-
chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A
′
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXX0A is an optimum solu-
tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access : 12
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9F12XXX0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXX0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as
K9F1208U0A-Y,P(TSOP1) except package type.
Part Number
Vcc Range
Organization
PKG Type
K9F1208D0A-Y,P
2.4 ~ 2.9V
X8
TSOP1
K9F1216D0A-Y,P
X16
TSOP1
K9F1208U0A-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F1208U0A-V,F
WSOP1
K9F1216U0A-Y,P
X16
TSOP1
相關(guān)PDF資料
PDF描述
K9F1208D0B Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
K9F1208D0B-D TV 128C 128#22D SKT RECP
K9F1208D0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1608W0A- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory
K9F1608W0A-TCB0 制造商:SAMSG 功能描述:
K9F1608W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory
K9F1G08B0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
K9F1G08D0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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