參數(shù)資料
型號(hào): K9F1216X0A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CAT5E PATCH CORD 100MHZ 4 FOOT BLUE
中文描述: 6400 × 8位,32 × 16位NAND閃存
文件頁(yè)數(shù): 44/46頁(yè)
文件大小: 748K
代理商: K9F1216X0A
FLASH MEMORY
44
K9F1208D0A
K9F1208U0A
K9F1216D0A
K9F1216U0A
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 23. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
C
L
2.65V device - V
OL
: 0.4V, V
OH
: Vcc
Q
-0.4V
相關(guān)PDF資料
PDF描述
K9F1208D0B Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
K9F1208D0B-D TV 128C 128#22D SKT RECP
K9F1208D0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1608W0A- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory
K9F1608W0A-TCB0 制造商:SAMSG 功能描述:
K9F1608W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory
K9F1G08B0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
K9F1G08D0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory