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參數(shù)資料
| 型號(hào)： | K9F1G08Q0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位/ 64米× 16位NAND閃存 |
| 文件頁(yè)數(shù)： | 10/40頁(yè) |
| 文件大小： | 729K |
| 代理商： | K9F1G08Q0M |
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FLASH MEMORY
10
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0
:
T
A
=0 to 70
°
C, K9F1GXXX0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F1GXXQ0M(1.8V)
K9F1GXXD0M(2.65V)
K9F1GXXU0M(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under
Bias
K9F1GXXX0M-XCB0
T
BIAS
-10 to +125
°
C
K9F1GXXX0M-XIB0
-40 to +125
Storage Temperature
K9F1GXXX0M-XCB0
T
STG
-65 to +150
°
C
K9F1GXXX0M-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K91G08Q0M | CONTACT |
| K9F1G16Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F2808U0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0A | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0A- | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-PIB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-YCB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-YIB0 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08R0A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
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