參數(shù)資料
型號: K9F1G08Q0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述: 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù): 18/40頁
文件大?。?/td> 729K
代理商: K9F1G08Q0M
FLASH MEMORY
18
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(4Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
10h
Address(4Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
R/B
t
R
RE
t
CEA
out
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
t
REA
相關(guān)PDF資料
PDF描述
K91G08Q0M CONTACT
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F2808U0 16M x 8 Bit NAND Flash Memory
K9F2808U0A 16M x 8 Bit NAND Flash Memory
K9F2808U0A- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory