參數(shù)資料
型號(hào)： K9F1G16Q0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁(yè)數(shù)： 13/40頁(yè)
文件大?。?/td> 729K
代理商： K9F1G16Q0M
FLASH MEMORY
13
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
Program / Erase Characteristics
NOTE
: 1. Max. time of
t
CBSY
depends on timing between internal program completion and data in
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
300
700
μ
s
μ
s
Dummy Busy Time for Cache Program
t
CBSY
3
700
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
4
cycles
Spare Array
-
-
4
cycles
Block Erase Time
t
BERS
-
2
3
ms
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
K9F1GXXQ0M
K9F1GXXD0M
K9F1GXXU0M
K9F1GXXQ0M
K9F1GXXD0M
K9F1GXXU0M
CLE setup Time
t
CLS
0
0
0
-
-
-
ns
CLE Hold Time
t
CLH
10
10
10
-
-
-
ns
CE setup Time
t
CS
0
0
0
-
-
-
ns
CE Hold Time
t
CH
10
10
10
-
-
-
ns
WE Pulse Width
t
WP
60
25
(1)
25
(1)
-
-
-
ns
ALE setup Time
t
ALS
0
0
0
-
-
-
ns
ALE Hold Time
t
ALH
10
10
10
-
-
-
ns
Data setup Time
t
DS
20
20
20
-
-
-
ns
Data Hold Time
t
DH
10
10
10
-
-
-
ns
Write Cycle Time
t
WC
80
45
45
-
-
-
ns
WE High Hold Time
t
WH
20
15
15
-
-
-
ns
AC Characteristics for Operation
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M K9F1GXXQ0M K9F1GXXD0M K9F1GXXU0M
Data Transfer from Cell to Register
t
R
-
-
-
25
25
25
μ
s
ALE to RE Delay
t
AR
10
10
10
-
-
-
ns
CLE to RE Delay
t
CLR
10
10
10
-
-
-
ns
Ready to RE Low
t
RR
20
20
20
-
-
-
ns
RE Pulse Width
t
RP
60
25
25
-
-
-
ns
WE High to Busy
t
WB
-
-
-
100
100
100
ns
Read Cycle Time
t
RC
80
50
50
-
-
-
ns
RE Access Time
t
REA
-
-
-
60
30
30
ns
CE Access Time
t
CEA
-
-
-
75
45
45
ns
RE High to Output Hi-Z
t
RHZ
-
-
-
30
30
30
ns
CE High to Output Hi-Z
t
CHZ
-
-
-
20
20
20
ns
RE or CE High to Output hold
t
OH
15
15
15
-
-
-
ns
RE High Hold Time
t
REH
20
15
15
-
-
-
ns
Output Hi-Z to RE Low
t
IR
0
0
0
-
-
-
ns
WE High to RE Low
t
WHR
60
60
60
-
-
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
-
-
5/10/500
(1)
5/10/500
(1)
5/10/500
(1)
μ
s
相關(guān)PDF資料
PDF描述
K9F2808U0 16M x 8 Bit NAND Flash Memory
K9F2808U0A 16M x 8 Bit NAND Flash Memory
K9F2808U0A- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F2808U0A-YCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F2808U0A-YIB0 TV 79C 79#22D PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G16Q0M-PCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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