參數(shù)資料
型號: K9F1G16Q0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述: 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù): 2/40頁
文件大小: 729K
代理商: K9F1G16Q0M
FLASH MEMORY
2
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
Document Title
128M x 8 Bit / 64M x 16 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Remark
History
Errata is added.(Front Page)-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 80 20 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
AC parameters are changed-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Before 45 25 15 50 15 25 30 45
After 80 60 20 80 20 60 60 75
Added Addressing method for program operation
1. Add the Protrusion/Burr value in WSOP1
PKG Diagram
.
1. PKG(TSOP1, WSOP1) Dimension Change
Draft Date
Mar.17. 2003
Apr. 9. 2003
Jul. 2. 2003
Aug. 5. 2003
Jan. 27. 2004
Apr. 23. 2004
May. 24. 2004
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K9F1G16U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory