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參數(shù)資料
| 型號： | K9F2808U0A-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 11/26頁 |
| 文件大小： | 354K |
| 代理商： | K9F2808U0A-YCB0 |
K9F2808U0A-YCB0, K9F2808U0A-YIB0
FLASH MEMORY
11
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
Block Replacement
NAND Flash Technical Notes
(Continued)
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
Page a
相關PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0A-YIB0 | TV 79C 79#22D PIN RECP |
| K9F2G08U0M | Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| K9F2G16U0M | FLASH MEMORY |
| K9F2G08Q0M | FLASH MEMORY |
| K9F2G16Q0M | FLASH MEMORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0A-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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