參數(shù)資料
型號(hào)： K9F2808U0A-YCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 1,600 × 8位NAND閃存
文件頁(yè)數(shù)： 23/26頁(yè)
文件大?。?/td> 354K
代理商： K9F2808U0A-YCB0
K9F2808U0A-YCB0, K9F2808U0A-YIB0
FLASH MEMORY
23
Figure 8. Block Erase Operation
BLOCK ERASE
The Erase operation is done on a block(16K Bytes) basis. Block address loading is accomplished in two cycles initiated by an Erase
Setup command(60h). Only address A
14
to A
23
is valid while A
9
to A
13
is ignored. The Erase Confirm command(D0h) following the
block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked.
Figure 8 details the sequence.
60h
Block Add. : A
9
~ A
23
I/O
0
~
7
R/B
Address Input(2Cycle)
I/O
0
Pass
D0h
70h
Fail
t
BERS
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
I/O #
Status
Definition
I/O 0
Program / Erase
"0" : Successful Program / Erase
"1" : Error in Program / Erase
I/O 1
Reserved for Future
Use
"0"
I/O 2
"0"
I/O 3
"0"
I/O 4
"0"
I/O 5
"0"
I/O 6
Device Operation
"0" : Busy "1" : Ready
I/O 7
Write Protect
"0" : Protected "1" : Not Protected
Table2. Read Status Register Definition
相關(guān)PDF資料
PDF描述
K9F2808U0A-YIB0 TV 79C 79#22D PIN RECP
K9F2G08U0M Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
K9F2G16U0M FLASH MEMORY
K9F2G08Q0M FLASH MEMORY
K9F2G16Q0M FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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