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參數(shù)資料
| 型號(hào)： | K9F2808U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 2/26頁(yè) |
| 文件大?。?/td> | 354K |
| 代理商： | K9F2808U0A |
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K9F2808U0A-YCB0, K9F2808U0A-YIB0
FLASH MEMORY
2
16M x 8 Bit NAND Flash Memory
The K9F2808U0A is a 16M(16,777,216)x8bit NAND Flash
Memory with a spare 512K(524,288)x8bit. Its NAND cell pro-
vides the most cost-effective solution for the solid state mass
storage market. A program operation programs the 528-byte
page in typically 200
μ
s and an erase operation can be per-
formed in typically 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve
as the ports for address and data input/output as well as com-
mand inputs. The on-chip write controller automates all pro-
gram and erase functions including pulse repetition, where
required, and internal verify and margining of data. Even the
write-intensive
systems
can
K9F2808U0A
′
s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm.
The K9F2808U0A is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
take
advantage
of
the
GENERAL DESCRIPTION
FEATURES
Voltage Supply : 2.7V~3.6V
Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program Time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Package : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
PIN CONFIGURATION
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
K9F2808U0A-YCB0/YIB0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
CE
Vcc
ALE
WE
N.C
N.C
Pin Name
Pin Function
I/O
0
~ I/O
7
Data Input/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
GND
GND input for enabling spare area
R/B
Ready/Busy output
V
CC
Power
V
SS
Ground
N.C
No Connection
PIN DESCRIPTION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0A- | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F2808U0A-YCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F2808U0A-YIB0 | TV 79C 79#22D PIN RECP |
| K9F2G08U0M | Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| K9F2G16U0M | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0A-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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