參數(shù)資料
型號(hào)： K9F2808U0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁數(shù)： 20/26頁
文件大?。?/td> 354K
代理商： K9F2808U0A
K9F2808U0A-YCB0, K9F2808U0A-YIB0
FLASH MEMORY
20
DEVICE OPERATION
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command reg-
ister along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera-
tion. Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are trans-
ferred to the data registers in less than 10
μ
s(tR). The system controller can detect the completion of this data transfer(tR) by analyz-
ing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially
pulsing RE. High to low transitions of the RE clock output the data stating from the selected column address up to the last column
address(column 511 or 527 depending on the state of GND input pin).
After the data of last column address is clocked out, the next page is automatically selected for sequential row read.
Waiting 10
μ
s again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. The
way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes
512 to 527 may be selectively accessed by writing the Read2 command with GND input pin low. Toggling SE during operation is pro-
hibited. Addresses A
0
to A
3
set the starting address of the spare area while addresses A
4
to A
7
are ignored. Unless the operation is
aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Read1 command(00h/01h) is needed to move the pointer back to the main area. Figures 3
thru 6 show typical sequence and timings for each read operation.
Figure 3. Read1 Operation
Start Add.(3Cycle)
00h
A
0
~ A
7
& A
9
~ A
23
Data Output(Sequential)
(00h Command)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle.
(01h Command)*
Data Field
Spare Field
1st half array
2st half array
1st half array
2st half array
相關(guān)PDF資料
PDF描述
K9F2808U0A- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:32; Connector Shell Size:19; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F2808U0A-YCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:11; Connector Shell Size:21; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F2808U0A-YIB0 TV 79C 79#22D PIN RECP
K9F2G08U0M Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
K9F2G16U0M FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0A- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0A-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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