參數(shù)資料
型號： K9F2808U0C-DCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
中文描述： 1,600 × 8位，8米× 16位NAND閃存
文件頁數(shù)： 24/29頁
文件大?。?/td> 304K
代理商： K9F2808U0C-DCB0
FLASH MEMORY
24
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
Figure 8. Read2 Operation
50h
A
0
~ A
3
& A
9
~ A
23
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Data Field
Spare Field
Start Add.(3Cycle)
(A
4
~ A
7
:
Don
t Care)
I/O
0
~
7
RE
t
R
1st half array 2nd half array
Figure 7-1. Sequential Row Read1 Operation
(only for K9F2808U0B-Y and K9F2808U0B-V, valid within a block)
00h
01h
A
0
~ A
7
& A
9
~ A
24
I/O
0
~
7
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
≈
(GND input=L, 00h Command)
Data Field
Spare Field
(GND input=L, 01h Command)
Data Field
Spare Field
(GND input=H, 00h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
1st half array 2nd half array
1st
2nd
Nth
On K9F2808U0B_Y or K9F2808U0B_V
CE must be held
low during tR
相關PDF資料
PDF描述
K9F2808U0C-VIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0B-VIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B TV 37C 37#16 SKT RECP
K9F2808Q0B-D TV 37C 37#16 SKT RECP
相關代理商/技術參數(shù)
參數(shù)描述
K9F2808U0C-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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