參數(shù)資料
型號: K9F2808U0C-V
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 8 Bit NAND Flash Memory
中文描述: 1,600 × 8位NAND閃存
文件頁數(shù): 31/31頁
文件大?。?/td> 774K
代理商: K9F2808U0C-V
FLASH MEMORY
31
K9F2808U0C
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down and recovery time of minimum 10
μ
s is required before internal circuit gets ready for any command
sequences as shown in Figure 15. The two step command sequence for program/erase provides additional software protection.
Figure 15. AC Waveforms for Power Transition
V
CC
WP
High
WE
Data Protection & Power up sequence
3.3V device : ~ 2.5V
3.3V device : ~ 2.5V
10
μ
s
相關(guān)PDF資料
PDF描述
K9F2808U0C-Y 16M x 8 Bit NAND Flash Memory
K9F2808U0C-XIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0C-PIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B 16M x 8 Bit NAND Flash Memory(16M x 8位與非閃速存儲器)
K9F2816U0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0C-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-XCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-XIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory