參數(shù)資料
型號(hào)： K9F2G16Q0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁(yè)數(shù)： 14/38頁(yè)
文件大?。?/td> 601K
代理商： K9F2G16Q0M
FLASH MEMORY
14
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Write 30h
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
1
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2G16U0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
K9F3208W0A- 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory
K9F3208W0A-TCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory
K9F3208W0A-TIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory
K9F4008W0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
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