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參數(shù)資料
| 型號(hào)： | K9F2G16Q0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁(yè)數(shù)： | 9/38頁(yè) |
| 文件大?。?/td> | 601K |
| 代理商： | K9F2G16Q0M |
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FLASH MEMORY
9
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9F2GXXQ0M(1.8V)
K9F2GXXU0M(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Page Read with
Serial Access
I
CC
1
tRC=30ns, CE=V
IL
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
Erase
I
CC
3
-
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
±
10
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
-
-
Input High Voltage
V
IH*
-
0.8xVcc
-
Vcc+0.3 0.8xVcc
-
Vcc+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
K9F2GXXQ0M :I
OH
=-100
μ
A
K9F2GXXU0M :I
OH
=-400
μ
A
Vcc-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F2GXXQ0M :I
OL
=100uA
K9F2GXXU0M :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F2GXXQ0M :V
OL
=0.1V
K9F2GXXU0M :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2GXXX0M-XCB0
:
T
A
=0 to 70
°
C, K9F2GXXX0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F2GXXQ0M(1.8V)
K9F2GXXU0M(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F2GXXQ0M(1.8V)
K9F2GXXU0M(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F2GXXX0M-XCB0
T
BIAS
-10 to +125
°
C
K9F2GXXX0M-XIB0
-40 to +125
Storage Temperature
K9F2GXXX0M-XCB0
T
STG
-65 to +150
°
C
K9F2GXXX0M-XIB0
Short Circuit Current
Ios
5
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2G16U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| K9F3208W0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory |
| K9F3208W0A-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory |
| K9F3208W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 8 Bit NAND Flash Memory |
| K9F4008W0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
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