參數(shù)資料
型號(hào): K9F2G16U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 11/38頁(yè)
文件大?。?/td> 601K
代理商: K9F2G16U0M
FLASH MEMORY
11
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
AC Characteristics for Operation
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
K9F2G08U0M(3.3V)
Unit
Min
Max
Min
Max
Data Transfer from Cell to Register
t
R
-
25
-
25
μ
s
ALE to RE Delay
t
AR
10
-
10
-
ns
CLE to RE Delay
t
CLR
10
-
10
-
ns
Ready to RE Low
t
RR
20
-
20
-
ns
RE Pulse Width
t
RP
25
-
15
-
ns
WE High to Busy
t
WB
-
100
-
100
ns
Read Cycle Time
t
RC
50
-
30
-
ns
RE Access Time
t
REA
-
30
-
18
ns
CE Access Time
t
CEA
-
45
-
23
ns
RE High to Output Hi-Z
t
RHZ
-
30
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
-
20
ns
RE or CE High to Output hold
t
OH
15
-
15
-
ns
RE High Hold Time
t
REH
15
-
10
-
ns
Output Hi-Z to RE Low
t
IR
0
-
0
-
ns
WE High to RE Low
t
WHR
60
-
60
-
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
5/10/500
(1)
-
5/10/500
(1)
μ
s
AC Timing Characteristics for Command / Address / Data Input
NOTES :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Parameter
Symbol
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
K9F2G08U0M(3.3V)
Unit
Min
Max
Min
Max
CLE setup Time
t
CLS
25
-
10
-
ns
CLE Hold Time
t
CLH
10
-
5
-
ns
CE setup Time
t
CS
35
-
15
-
ns
CE Hold Time
t
CH
10
-
5
-
ns
WE Pulse Width
t
WP
25
-
15
-
ns
ALE setup Time
t
ALS
25
-
10
-
ns
ALE Hold Time
t
ALH
10
-
5
-
ns
Data setup Time
t
DS
20
-
10
-
ns
Data Hold Time
t
DH
10
-
5
-
ns
Write Cycle Time
t
WC
45
-
30
-
ns
WE High Hold Time
t
WH
15
-
10
-
ns
ALE to Data Loading Time
t
ADL
100
-
100
-
ns
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