參數(shù)資料
型號： K9F2G16U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 2/38頁
文件大?。?/td> 601K
代理商： K9F2G16U0M
FLASH MEMORY
2
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.5
0.6
Remark
Preliminary
History
1. The value of AC parameters for K9F2G08U0M are changed.
2. The definition and value of setup and hold time are changed.
K9F2G16U0M
K9F2GXXQ0M
3. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 22~25)
-
tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
4. Added addressing method for program operation
1. PKG(TSOP1, WSOP1) Dimension Change
ITEM
K9F2G08U0M
Before
After
t
WC
45
30
t
WP
25
15
t
WH
15
10
t
RC
50
30
t
RP
25
15
t
REH
15
10
t
REA
30
18
t
CEA
45
23
t
ADL
-
100
ITEM
K9F2G08U0M
t
CLS
25
10
t
CLH
10
5
t
CS
35
15
t
CH
10
5
t
ALS
25
10
t
ALH
10
5
t
DS
20
10
t
DH
10
5
Draft Date
Apr. 22.2004
May. 19. 2004
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