參數(shù)資料
型號(hào): K9F5608Q0C-DCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb/256Mb 1.8V NAND Flash Errata
中文描述: 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù): 1/39頁(yè)
文件大?。?/td> 655K
代理商: K9F5608Q0C-DCB0
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
March. 2003
ELECTRONICS
1
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification
.
> AC characteristics : Refer to Table
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0
Improvement schedule : The components without this restriction will
be available from work week 23 or after.
Workaround : Relax the relevant timing parameters according to the table.
Sincerely,
chwoosun@sec.samsung.com
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
Table
Parameters
Specification
Relaxed Condition
tWC
45
80
tWH
15
20
tWP
25
60
tRC
50
80
tREH
15
20
tRP
25
60
tREA
30
60
UNIT : ns
tCEA
45
75
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