參數(shù)資料
型號(hào)： K9F5608U0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 6C 6#12 PIN RECP
中文描述： 32M的× 8位NAND閃存
文件頁(yè)數(shù)： 1/29頁(yè)
文件大?。?/td> 610K
代理商： K9F5608U0A
K9F5608U0A-YCB0,K9F5608U0A-YIB0
FLASH MEMORY
1
Document Title
32M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
0.3
0.4
Remark
Advanced
Information
Preliminary
Preliminary
History
Initial issue.
1. Support copy-back program
- The copy-back program is configured to quickly and efficiently rewrite
data stored in one page within the array to another page within the
same array without utilizing an external memory. Since the time-con
suming sequently-reading and its re-loading cycles are removed, the
system performance is improved. The benefit is especially obvious
when a portion of a block is updated so that the rest of the block also
need to be copied to the newly assigned free block.
1. Explain how pointer operation works in detail.
2. For partial page programming into the copied page
- Once the copy-back Program is finished, any additional partial page
programming into the copied pages is prohibited before erase.
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
4. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
1. In addition, explain WE function in pin description
- The WE must be held high when outputs are activated.
1.Powerup sequence is added
: Recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. AC parameter tAR1 value : 100ns --> 20ns
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
≈
WE
1
μ
Draft Date
Oct. 4th 2000
Nov. 20th 2000
Mar. 2th 2001
Jul. 22th 2001
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0A-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608U0A-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608U0B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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