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參數(shù)資料
| 型號： | K9F5608U0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 6C 6#12 PIN RECP |
| 中文描述： | 32M的× 8位NAND閃存 |
| 文件頁數(shù)： | 26/29頁 |
| 文件大?。?/td> | 610K |
| 代理商： | K9F5608U0A |
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K9F5608U0A-YCB0,K9F5608U0A-YIB0
FLASH MEMORY
26
Figure 11. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 11 below.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
Table3. Device Status
t
RST
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5608U0A-YCB0 | TV 16C 16#16 PIN RECP |
| K9F5608U0A-YIB0 | TV 79C 79#22D PIN RECP |
| K9F6408U0C-T | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-V | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0C | 8M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5608U0A-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory |
| K9F5608U0A-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory |
| K9F5608U0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
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