參數(shù)資料
型號： K9F5616D0C-H
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
中文描述： 32M的× 8位，16米x 16位NAND閃存
文件頁數(shù)： 11/42頁
文件大?。?/td> 684K
代理商： K9F5616D0C-H
FLASH MEMORY
11
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0
:
T
A
=0 to 70
°
C, K9F56XXX0C-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F56XXQ0C(1.8V)
K9F56XXD0C(2.65V)
K9F56XXU0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F56XXX0C-XCB0
T
BIAS
-10 to +125
°
C
K9F56XXX0C-XIB0
-40 to +125
Storage Temperature
K9F56XXX0C-XCB0
T
STG
-65 to +150
°
C
K9F56XXX0C-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9F5616D0C-P 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-Y 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D TV 37C 37#16 SKT RECP
K9F5608D0C-H TV 37C 37#16 PIN RECP
K9F5608D0C-P TV 37C 37#16 PIN RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616D0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616D0C-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*