- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373087 > K9F5616D0C-P (SAMSUNG SEMICONDUCTOR CO. LTD.) 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F5616D0C-P |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁數(shù)： | 38/42頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K9F5616D0C-P |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁當前第38頁第39頁第40頁第41頁第42頁
FLASH MEMORY
38
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
Block Lock Status can be read on a block basis, which may be read to find out whether designated block is available to be pro-
grammed or erased. After writing 7Ah command to the command register. and block address to be checked, a read cycle outputs the
content of the Block Lock Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control
allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or
CE does not need to be toggled for updated status. Blcok Lock Status Read is prohibited while the device is busy state.
Refer to table 6 for specific Status Register definitions. The command register remains in Block Lock Status Read mode until further
commands are issued to it.
In high state of LOCKPRE pin, write protection status can be checked by Block Lock Status
Read(7Ah) while in low state by Status Read(70h).
2. Block Lock Status Read
CE
CLE
WE
ALE
RE
7Ah
Read Block Lock
status Command
Block Lock Status
Add.1
Block Address 2cycle
I/Ox
Dout
Add.2
Table6. Block Lock Status Register definitions
WP
t
WHR2
IO7~IO3
IO2(Unlock)
IO1(Lock)
IO0(Lock-tight)
Read 1) block
case
X
0
1
0
Read 2) block
case
X
1
1
0
Read 3) block
case
X
0
0
1
Read 4) block
case
X
1
0
1
(1)Lock
(2)unlock
(3)Lock-tight
(4)unlock
(1)Lock
(3)Lock-tight
(1)Lock
(2)Unlock
(3)Lock-tight
相關PDF資料 |
PDF描述 |
|---|---|
| K9F5616D0C-Y | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608D0C-D | TV 37C 37#16 SKT RECP |
| K9F5608D0C-H | TV 37C 37#16 PIN RECP |
| K9F5608D0C-P | TV 37C 37#16 PIN RECP |
| K9F5608D0C-Y | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616D0C-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。