- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373087 > K9F5616D0C-P (SAMSUNG SEMICONDUCTOR CO. LTD.) 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F5616D0C-P |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁數(shù)： | 8/42頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K9F5616D0C-P |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當(dāng)前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
FLASH MEMORY
8
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
512Byte
16 Byte
Figure 1-1. K9F5608X0C (X8) FUNCTIONAL BLOCK DIAGRAM
Figure 2-1. K9F5608X0C (X8) ARRAY ORGANIZATION
NOTE
: Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A
8
is set to "Low" or "High" by the 00h or 01h Command.
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
3rd Cycle
A
17
A
18
A
19
A
20
A
21
A
22
A
23
A
24
V
CC
V
SS
X-Buffers
Latches
& Decoders
256M + 8M Bit
NAND Flash
ARRAY
Command
Register
(512 + 16)Byte x 65536
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
9
- A
24
A
0
- A
7
Command
CE
RE
WE
WP
I/0 0
I/0 7
V
CC/
V
CCQ
V
SS
A
8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
64K Pages
(=2,048 Blocks)
512 Byte
8 bit
16 Byte
1 Block =32 Pages
= (16K + 512) Byte
I/O 0 ~ I/O 7
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 2048 Blocks
= 264 Mbits
Column Address
Row Address
(Page Address)
Page Register
CLE ALE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5616D0C-Y | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608D0C-D | TV 37C 37#16 SKT RECP |
| K9F5608D0C-H | TV 37C 37#16 PIN RECP |
| K9F5608D0C-P | TV 37C 37#16 PIN RECP |
| K9F5608D0C-Y | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616D0C-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。