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參數(shù)資料
| 型號： | K9F5616D0C-Y |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁數(shù)： | 2/42頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K9F5616D0C-Y |
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FLASH MEMORY
2
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No.
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2.6
2.7
2.8
2.9
3.0
Remark
History
1. tREA value of 1.8V device is changed.
K9F56XXQ0C : tREA 30ns --> 35ns
2. Errata is deleted.
1. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9F56XXU0C
K9F56XXD0C 50 15 25 50 15 25 30 45
K9F56XXQ0C 60 20 40 60 20 40 40 55
1. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9F5608Q0C 50 15 25 50 15 25 35 45
K9F5616Q0C 60 20 40 60 20 40 40 55
1. The Test Condition for Stand-by Currents are changed.
I
SB
1: CE=V
IH
, WP=0V/V
CC
-->> CE=V
IH
, WP=LOCKPRE=0V/V
CC
I
SB
2
:
CE=V
CC
-0.2, WP=0V/V
CC
-->> CE=V
CC
-0.2, WP=LOCKPRE=0V/V
CC
2. Add the Protrusion/Burr value in WSOP1
PKG Diagram
.
1. PKG(TSOP1, WSOP1) Dimension Change
Draft Date
Aug. 18th 2003
Oct. 28th 2003
Dec. 17th 2003
Apr. 24th 2004
May. 24th 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5608D0C-D | TV 37C 37#16 SKT RECP |
| K9F5608D0C-H | TV 37C 37#16 PIN RECP |
| K9F5608D0C-P | TV 37C 37#16 PIN RECP |
| K9F5608D0C-Y | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| K9F5608U0 | TV 6C 6#12 PIN WALL RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616Q0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
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