- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373087 > K9F5616D0C-Y (SAMSUNG SEMICONDUCTOR CO. LTD.) 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F5616D0C-Y |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁數(shù)： | 35/42頁 |
| 文件大?。?/td> | 684K |
| 代理商： | K9F5616D0C-Y |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁當(dāng)前第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
FLASH MEMORY
35
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
Block Lock mode is enabled while LOCKPRE pin state is high, which is to offer protection features for NAND Flash data. The Block
Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data by allowing those blocks to be locked
or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first allows software control(command input
method) of block locking that is useful for frequently changed data blocks, while the second requires hardware control(WP low pulse
input method) before locking can be changed that is useful for protecting infrequently changed code blocks.
The followings summarized the locking functionality.
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.
- The Lock-tight command locks blocks and prevents from being unlocked.
And Lock-tight state can be returned to lock state only by Hardware control(WP low pulse input).
Block Lock Mode
- Command Sequence: Lock block Command(2Ah)
- All blocks default to locked by power-up and Hardware control(WP low pulse input)
- Partial block lock is not available; Lock block operation is based on all block unit
- Unlocked blocks can be locked by using the Lock block command, and a lock block’s status can be changed to unlock or lock-tight
using the appropriate commands
1. Block lock operation
1) Lock
> In high state of LOCKPRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is
regarded as NAND Flash without LOCKPRE pin.
CE
CLE
WE
2Ah
Lock Command
I/Ox
WP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5608D0C-D | TV 37C 37#16 SKT RECP |
| K9F5608D0C-H | TV 37C 37#16 PIN RECP |
| K9F5608D0C-P | TV 37C 37#16 PIN RECP |
| K9F5608D0C-Y | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| K9F5608U0 | TV 6C 6#12 PIN WALL RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616Q0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0B-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616Q0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。