參數(shù)資料
型號(hào): K9F5616D0C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
中文描述: 32M的× 8位,16米x 16位NAND閃存
文件頁(yè)數(shù): 30/42頁(yè)
文件大小: 684K
代理商: K9F5616D0C
FLASH MEMORY
30
K9F5608D0C
K9F5608U0C
K9F5608Q0C
K9F5616D0C
K9F5616U0C
K9F5616Q0C
Figure 9. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(3Cycle)
RE
t
R
X8 device : A
0
~ A
3
& A
9
~ A
24
X16 device : A
0
~ A
2
& A
9
~ A
24
Main array
Data Field
Spare Field
Figure 8-1. Sequential Row Read1 Operation
(only for
K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
)
00h
01h
A
0
~ A
7
& A
9
~ A
24
I/Ox
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
(00h Command)
Data Field
Spare Field
(01h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
X8 device : A
4
~ A
7
Don’t care
X16 device : A
3
~ A
7
are "L"
I/Ox
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F5616D0C-D 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-H 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-P 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616D0C-Y 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608D0C-D TV 37C 37#16 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616D0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616D0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616D0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616D0C-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory