參數(shù)資料
型號(hào)： K9F6408U0C-V
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 8 Bit NAND Flash Memory
中文描述： 8米× 8位NAND閃存
文件頁(yè)數(shù)： 10/30頁(yè)
文件大?。?/td> 784K
代理商： K9F6408U0C-V
FLASH MEMORY
10
K9F6408U0C
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and
Vcc
Q
pins. During transitions, this level may undershoot to -2.0V for periods
<20ns. Maximum DC voltage on input/output pins is V
CCQ
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
V
Vcc
Q
-0.6 to + 4.6
V
Temperature
Under Bias
K9F6408U0C-XCB0
T
BIAS
-10 to + 125
°
C
K9F6408U0C-XIB0
-40 to + 125
Storage Temperature
T
STG
-65 to + 150
°
C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408U0C-XCB0:TA=0 to 70
°
C, K9F6408U0C-XIB0:TA=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
Vcc
Q
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE :
V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
CE=V
IL,
I
OUT
=0mA
tRC=50ns
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
Input High Voltage
V
IH*
I/O pins
2.0
-
Vcc
Q
+0.3
V
Except I/O pins
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
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