參數(shù)資料
型號(hào)： K9K1208D0C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 37C 37#16 SKT RECP
中文描述： 6400 × 8位，32 × 16位NAND閃存
文件頁(yè)數(shù)： 14/39頁(yè)
文件大?。?/td> 953K
代理商： K9K1208D0C
FLASH MEMORY
14
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid
block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is
placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The
initial invalid block(s) status is defined by the 6th byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure
that either the 1st or 2nd page of every initial invalid block has non-FFh(X8 device) or non-FFFFh(X16 device) data at the column
address of 517(X8 device) or 256 and 261(X16 device). Since the initial invalid block information is also erasable in most cases, it is
impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid
block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 3). Any intentional erasure of the initial invalid block information is prohibited.
*
Check "FFh" at the column address
517(X8 device) or 256 and 261(X16 device)
Figure 3. Flow chart to create initial invalid block table.
Start
Set Block Address = 0
Check "FFh"
Increment Block Address
Last Block
End
No
Yes
Yes
Create (or update)
Initial
Invalid Block(s) Table
No
of the 1st and 2nd page in the block
相關(guān)PDF資料
PDF描述
K9K1216Q0C SCSI 2 MALE-MALE 3 FT
K9K1216U0C M1 - DVI-D W/USB 10 FEET
K9K1216D0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208Q0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1208Q0C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208Q0C-DIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K1208U0A-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0A-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*