參數(shù)資料
型號(hào)： K9K1208D0C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 37C 37#16 SKT RECP
中文描述： 6400 × 8位，32 × 16位NAND閃存
文件頁(yè)數(shù)： 3/39頁(yè)
文件大?。?/td> 953K
代理商： K9K1208D0C
FLASH MEMORY
3
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V,
3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can
be performed in typical 200
μ
s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed
in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9K1216Q0C :
60ns) cycle time per byte (X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well
as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required,
and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K12XXX0C
′
s extended
reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9K12XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
FEATURES
Voltage Supply
- 1.8V device(K9K12XXQ0C) : 1.70~1.95V
- 2.65V device(K9F12XXD0C) : 2.4~2.9V
- 3.3V device(K9K12XXU0C) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9K1208X0C) : (64M + 2048K)bit x 8 bit
- X16 device(K9K1216X0C) : (32M + 1024 K)bit x 16bit
- Data Register
- X8 device(K9K1208X0C) : (512 + 16)bit x 8bit
- X16 device(K9K1216X0C) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9K1208X0C) : (512 + 16)Byte
- X16 device(K9K1216X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9K1208X0C) : (16K + 512)Byte
- X16 device(K9K1216X0C) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9K1208X0C) : (512 + 16)Byte
- X16 device(K9K1216X0C) : (256 + 8)Word
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)*
*K9K1216Q0C : 60ns(Min.)
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9K12XXX0C-GCB0/GIB0
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm)
- K9K12XXX0C-JCB0/JIB0
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm)
- Pb-free Package
PRODUCT LIST.
Part Number
Vcc Range
Organization
PKG Type
K9K1208Q0C-G,J
1.70 ~ 1.95V
X8
FBGA
K9K1216Q0C-G,J
X16
K9K1208D0C-G,J
2.4 ~ 2.9V
X8
K9K1216D0C-G,J
X16
K9K1208U0C-G,J
2.7 ~ 3.6V
X8
K9K1216U0C-G,J
X16
相關(guān)PDF資料
PDF描述
K9K1216Q0C SCSI 2 MALE-MALE 3 FT
K9K1216U0C M1 - DVI-D W/USB 10 FEET
K9K1216D0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208Q0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1208Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208Q0C-DIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K1208U0A-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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