參數(shù)資料
型號(hào)： K9K1208Q0C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
中文描述： 6400 × 8位，32 × 16位NAND閃存
文件頁(yè)數(shù)： 37/39頁(yè)
文件大小： 953K
代理商： K9K1208Q0C
FLASH MEMORY
37
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 17. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
C
L
1.8V device - V
OL
: 0.1V, V
OH
: Vcc
Q
-0.1V
2.65V device - V
OL
: 0.4V, V
OH
: Vcc
Q
-0.4V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
相關(guān)PDF資料
PDF描述
K9K1208U0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1G08B0B 128M x 8 Bit NAND Flash Memory
K9K1G08R0B 128M x 8 Bit NAND Flash Memory
K9K1G08U0B 128M x 8 Bit NAND Flash Memory
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1208Q0C-DIB0T00 制造商:Samsung Semiconductor 功能描述:
K9K1208U0A-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0A-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9K1208U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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