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參數(shù)資料
| 型號： | K9K1216Q0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SCSI 2 MALE-MALE 3 FT |
| 中文描述： | 6400 × 8位，32 × 16位NAND閃存 |
| 文件頁數(shù)： | 9/39頁 |
| 文件大?。?/td> | 953K |
| 代理商： | K9K1216Q0C |
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FLASH MEMORY
9
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K12XXX0C-GCB0,JCB0
:
T
A
=0 to 70
°
C, K9K12XXX0C-GIB0,JIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K12XXQ0C(1.8V)
K9K12XXD0C(2.65V)
K9K12XXU0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9K12XXX0C-XCB0
T
BIAS
-10 to +125
°
C
K9K12XXX0C-XIB0
-40 to +125
Storage Temperature
K9K12XXX0C-XCB0
T
STG
-65 to +150
°
C
K9K12XXX0C-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1216U0C | M1 - DVI-D W/USB 10 FEET |
| K9K1216D0C | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1208Q0C | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1208U0C | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1G08B0B | 128M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1216U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1G08B0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08R0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
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