參數(shù)資料
型號(hào)： K9K1216U0C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： M1 - DVI-D W/USB 10 FEET
中文描述： 6400 × 8位，32 × 16位NAND閃存
文件頁(yè)數(shù)： 2/39頁(yè)
文件大?。?/td> 953K
代理商： K9K1216U0C
FLASH MEMORY
2
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
2.6
2.7
2.8
2.9
3.0
Remark
History
1. tREA value of 1.8V device is changed.
K9K12XXQ0C : tREA 30ns --> 35ns
2. Errata is deleted.
1. Command table is edited.
2. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9K12XXU0C
K9K12XXD0C 50 15 25 50 15 25 30 45
K9K12XXQ0C 60 20 40 60 20 40 40 55
1. AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
K9K1208Q0C 50 15 25 50 15 25 35 45
K9K1216Q0C 60 20 40 60 20 40 40 55
1. The Test Condition for Stand-by Currents are changed.
I
SB
1: CE=V
IH
, WP=0V/V
CC
-->> CE=V
IH
, WP=LOCKPRE=0V/V
CC
ISB2:
CE=V
CC
-0.2, WP=0V/V
CC
-->> CE=V
CC
-0.2, WP=LOCKPRE=0V/V
CC
1. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 14 )
-Error in write or read operation ( page 15 )
-Program Flow Chart ( page 15 )
2. TBGA->FBGA
Draft Date
Aug. 20th. 2003
Oct. 28th. 2003
Dec. 17th. 2003
Apr. 22th 2004
Oct. 25th. 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
相關(guān)PDF資料
PDF描述
K9K1216D0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208Q0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208U0C 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1G08B0B 128M x 8 Bit NAND Flash Memory
K9K1G08R0B 128M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08B0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory
K9K1G08Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08R0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory
K9K1G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*