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參數(shù)資料
| 型號： | K9K1G08R0B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位NAND閃存 |
| 文件頁數(shù)： | 11/41頁 |
| 文件大?。?/td> | 1072K |
| 代理商： | K9K1G08R0B |
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FLASH MEMORY
11
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
(1)
-
200
500
μ
s
Dummy Busy Time for Multi Plane Program
t
DBSY
1
10
μ
s
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
1
cycle
Spare Array
-
-
2
cycles
Block Erase Time
NOTE
: 1.Typical program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and 25’C
t
BERS
-
2
3
ms
Capacitance
(
T
A
=25
°
C, V
CC
=1.8V/2.7V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
20
pF
Input Capacitance
C
IN
V
IN
=0V
-
20
pF
AC TEST CONDITION
(K9K1G08X0B-XCB0 :TA=0 to 70
°
C, K9K1G08X0B-XIB0 :TA=-40 to 85
°
C
K9K1G08R0B : Vcc=1.65V~1.95V , K9K1G08B0B : Vcc=2.5V~2.9V, K9K1G08U0B : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Input Pulse Levels
0V to Vcc
Q
0V to Vcc
Q
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
5ns
Input and Output Timing Levels
Vcc
Q
/2
Vcc
Q
/2
1.5V
K9K1G08R0B:Output Load (Vcc
Q
:1.8V +/-10%)
K9K1G08B0C:Output Load (Vcc
Q
:2.7V +/-10%)
K9K1G08U0B:Output Load (Vcc
Q
:3.0V +/-10%)
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
K9K1G08U0B:Output Load (Vcc
Q
:3.3V +/-10%)
-
-
1 TTL GATE and CL=100pF
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(4clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(4clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read(Busy) on the devices
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1G08U0B | 128M x 8 Bit NAND Flash Memory |
| K9K1G08Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A1 | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays |
| K9K1G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
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