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參數(shù)資料
| 型號(hào)： | K9K1G08R0B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 6/41頁(yè) |
| 文件大?。?/td> | 1072K |
| 代理商： | K9K1G08R0B |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)
FLASH MEMORY
6
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
512B Bytes
16 Bytes
Figure 1-1. Functional Block Diagram
Figure 2-1. Array Organization
NOTE
: Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A
8
is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
2nd Cycle
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
3rd Cycle
A
17
A
18
A
19
A
20
A
21
A
22
A
23
A
24
4th Cycle
A
25
A
26
*L
*L
*L
*L
*L
*L
V
CC
V
SS
X-Buffers
Latches
& Decoders
Command
Register
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
9
- A
26
A
0
- A
7
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 7
V
CC
V
SS
A
8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
256K Pages
(=8,192 Blocks)
512 Bytes
8 bit
16 Bytes
1 Block = 32 Pages
(16K + 512) Byte
I/O 0 ~ I/O 7
1 Page = 528 Bytes
1 Block = 528 B x 32 Pages
= (16K + 512) Bytes
1 Device = 528B x 32Pages x 8,192 Blocks
= 1,056 Mbits
Column Address
Row Address
(Page Address)
Page Register
ALE
1,024M + 32M Bit
NAND Flash
ARRAY
(512 + 16)Byte x 262,144
Y-Gating
Page Register & S/A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1G08U0B | 128M x 8 Bit NAND Flash Memory |
| K9K1G08Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A1 | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G08U0A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0A1 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08U0B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays |
| K9K1G08U0M | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:nand flash |
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