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參數(shù)資料
| 型號： | K9K2G08U0M-VIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 10/38頁 |
| 文件大小： | 734K |
| 代理商： | K9K2G08U0M-VIB0 |
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FLASH MEMORY
10
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9K2GXXQ0M(1.8V)
K9K2GXXU0M(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Page Read with
Serial Access
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
5
20
-
10
30
mA
Program
I
CC
2
-
-
5
20
-
10
30
Erase
I
CC
3
-
-
5
20
-
10
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
20
100
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
±
20
-
-
±
20
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
-
-
Input High Voltage
V
IH
-
V
CC
-0.4
-
V
CC
+
0.3
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9K2GXXQ0M :I
OH
=-100
μ
A
K9K2GXXU0M :I
OH
=-400
μ
A
Vcc-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9K2GXXQ0M :I
OL
=100uA
K9K2GXXU0M :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9K2GXXQ0M :V
OL
=0.1V
K9K2GXXU0M :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K2GXXX0M-XCB0
:
T
A
=0 to 70
°
C, K9K2GXXX0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K2GXXQ0M(1.8V)
K9K2GXXU0M(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9K2GXXQ0M(1.8V)
K9K2GXXU0M(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9K2GXXX0M-XCB0
T
BIAS
-10 to +125
°
C
K9K2GXXX0M-XIB0
-40 to +125
Storage Temperature
K9K2GXXX0M-XCB0
T
STG
-65 to +150
°
C
K9K2GXXX0M-XIB0
Short Circuit Current
Ios
5
mA
相關PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-P | ULTRA2 LVD SCSI INTERNAL CBL 3 |
| K9K2G16Q0M-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9K2G08X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08X0A-J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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