- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373088 > K9K2G08U1A (SAMSUNG SEMICONDUCTOR CO. LTD.) 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | K9K2G08U1A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位/ 256M × 8位NAND閃存 |
| 文件頁數(shù)： | 13/37頁 |
| 文件大?。?/td> | 1008K |
| 代理商： | K9K2G08U1A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
13
K9F1G08U0A
K9F1G08R0A
K9K2G08U1A
FLASH MEMORY
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
Program Error
Yes
No
Yes
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the block
failure rate.The following possible failure modes should be considered to implement a highly reliable system. In the case of status
read failure after erase or program, block replacement should be done. Because program status fail during a page program does not
affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an
erased empty block and reprogramming the current target data and copying the rest of the replaced block.In case of Read, ECC must
be employed. To improve the efficiency of memory space, it is recommended that the read failure due to single bit error should be
reclaimed by ECC without any block replacement. The block failure rate in the qualification report does not include those reclaimed
blocks.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Completed
: If program operation results in an error, map out
the block including the page in error and copy the
*
target data to another block.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1G08R0A | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9K2G16Q0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-YCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08X0A-J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G16Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。