參數(shù)資料
型號(hào)： K9F1G08R0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類(lèi)： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 128M的× 8位/ 256M × 8位NAND閃存
文件頁(yè)數(shù)： 1/37頁(yè)
文件大?。?/td> 1008K
代理商： K9F1G08R0A
1
K9F1G08U0A
K9F1G08R0A
K9K2G08U1A
FLASH MEMORY
Document Title
128M x 8 Bit / 256M x 8 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial issue
1. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26)
-
tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
2. Added Addressing method for program operation
1. Add the Protrusion/Burr value in WSOP1
PKG Diagram
.
1. PKG(TSOP1, WSOP1) Dimension Change
1. Technical note is changed
2. Notes of AC timing characteristics are added
3. The description of Copy-back program is changed
4. Voltage range is changed
-1.7V~1.95V -> 1.65V~1.95V
5. Note2 of Command Sets is added
1. CE access time : 23ns->35ns (p.11)
1. The value of tREA for 3.3V device is changed.(18ns->20ns)
2. EDO mode is added.
1. The flow chart to creat the initial invalid block table is cahnged.
Draft Date
Aug. 24. 2003
Jan. 27. 2004
Apr. 23. 2004
May. 19. 2004
Jan. 21. 2005
Feb. 14. 2005
May. 24. 2005
May 6. 2005
相關(guān)PDF資料
PDF描述
K9K2G16Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08R0B-JIB0000 制造商:Samsung SDI 功能描述:PN may be NE SE
K9F1G08U0A 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0B-PCB0000 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 TSOP1 - Trays
K9F1G08U0B-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 48TSOP-I - Tape and Reel
K9F1G08U0B-PCBO 制造商:Samsung 功能描述:Memory,NAND,1G,128MX8,48TSOP
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