參數(shù)資料
型號(hào)： K9K2G16Q0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 12/40頁
文件大?。?/td> 641K
代理商： K9K2G16Q0M
FLASH MEMORY
12
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9K2GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Page Read with
Serial Access
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
15
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
20
100
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
±
20
-
-
±
20
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
-
-
Input High Voltage
V
IH*
-
V
CC
-0.4
-
V
CC
+
0.3
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9K2GXXQ0M:I
OH
=-100
μ
A
K9XXGXXUXM:I
OH
=-400
μ
A
Vcc-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9K2GXXQ0M :I
OL
=100uA
K9XXGXXUXM :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9K2GXXQ0M :V
OL
=0.1V
K9XXGXXUXM :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXGXXXXM-XCB0
:
T
A
=0 to 70
°
C, K9XXGXXXXM-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K2GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.7
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9K2GXXQ0M(1.8V) K9XXGXXUXM(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9XXGXXXXM-XCB0
T
BIAS
-10 to +125
°
C
K9XXGXXXXM-XIB0
-40 to +125
Storage Temperature
K9XXGXXXXM-XCB0
T
STG
-65 to +150
°
C
K9XXGXXXXM-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G16Q0M-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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