參數(shù)資料
型號(hào)： K9D1G08V0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64MB & 128MB SmartMediaTM Card
中文描述： 64MB的
文件頁(yè)數(shù)： 1/37頁(yè)
文件大小： 657K
代理商： K9D1G08V0M
SmartMedia
TM
1
K9S1208V0M/A-SSB0
K9D1G08V0M/A-SSB0
Document Title
64MB & 128MB SmartMedia
TM
Card
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.
Revision No
0.0
0.1
0.2
History
Initial issue
1. Changed DC characteristics
2. Added t
DBSY
parameter
3. Removed Copy-Back program command
4. Changed AC characteristics
1.Powerup sequence is added
Recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. Changed AC characteristics
(Before)
Parameter
Min
Typ
Max
Unit
Operating
Current
Sequential Read
-
10
20->30
mA
Program
-
10
20->30
Erase
-
10
20->30
Parameter
Symbol
Min
Max
Unit
ALE to RE Delay
( ID read )
t
AR1
100->10
-
ns
Parameter
Symbol
Min
Max
Unit
ALE to RE Delay (ID read)
t
AR1
100
-
ns
ALE to RE Delay (Read
t
AR2
100
-
RE Low to Status Output
t
RSTO
-
35
CE Low to Status Output
t
CSTO
-
45
RE access time(Read ID)
t
READID
-
35
Draft Date
Mar. 30th 2001
Apr. 7th 2001
Sep. 7th 2001
Remark
Preliminary
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
WE
1
μ
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9D1G08V0M/A-SSB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64MB & 128MB SmartMediaTM Card
K9E2G08B0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9E2G08B0M-F 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9E2G08B0M-FCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9E2G08B0M-FIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
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