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參數(shù)資料
| 型號： | K9K2G16U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 14/40頁 |
| 文件大?。?/td> | 641K |
| 代理商： | K9K2G16U0M |
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FLASH MEMORY
14
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
AC Characteristics for Operation
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Min
Max
Max
Unit
K9K2GXXQ0M
K9K2GXXU0M
K9K2GXXQ0M
K9K2GXXU0M
Data Transfer from Cell to Register
t
R
-
-
25
25
μ
s
ALE to RE Delay
t
AR
10
10
-
-
ns
CLE to RE Delay
t
CLR
10
10
-
-
ns
Ready to RE Low
t
RR
20
20
-
-
ns
RE Pulse Width
t
RP
60
25
-
-
ns
WE High to Busy
t
WB
-
-
100
100
ns
Read Cycle Time
t
RC
80
50
-
-
ns
RE Access Time
t
REA
-
-
60
30
ns
CE Access Time
t
CEA
-
-
75
45
ns
RE High to Output Hi-Z
t
RHZ
-
-
30
30
ns
CE High to Output Hi-Z
t
CHZ
-
-
20
20
ns
RE or CE High to Output hold
t
OH
15
15
-
-
ns
RE High Hold Time
t
REH
20
15
-
-
ns
Output Hi-Z to RE Low
t
IR
0
0
-
-
ns
WE High to RE Low
t
WHR
60
60
-
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
-
5/10/500
(1)
5/10/500
(1)
μ
s
AC Timing Characteristics for Command / Address / Data Input
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
K9K2GXXQ0M
K9K2GXXU0M
K9K2GXXQ0M
K9K2GXXU0M
CLE setup Time
t
CLS
0
0
-
-
ns
CLE Hold Time
t
CLH
10
10
-
-
ns
CE setup Time
t
CS
0
0
-
-
ns
CE Hold Time
t
CH
10
10
-
-
ns
WE Pulse Width
t
WP
60
25
(1)
-
-
ns
ALE setup Time
t
ALS
0
0
-
-
ns
ALE Hold Time
t
ALH
10
10
-
-
ns
Data setup Time
t
DS
20
20
-
-
ns
Data Hold Time
t
DH
10
10
-
-
ns
Write Cycle Time
t
WC
80
45
-
-
ns
WE High Hold Time
t
WH
20
15
-
-
ns
Program / Erase Characteristics
NOTE
: 1. Max. time of
t
CBSY
depends on timing between internal program completion and data in
Parameter
Sym-
Min
Typ
Max
Unit
Program Time
t
PROG
-
300
700
μ
s
μ
s
Dummy Busy Time for Cache Program
t
CBSY
3
700
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
4
cycles
Spare Array
-
-
4
cycles
Block Erase Time
t
BERS
-
2
3
ms
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PDF描述 |
|---|---|
| K9W4G08U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9W4G16U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M | ER 19C 19#12 SKT PLUG |
| K9K2G16Q0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K4G08U1M | 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G16U0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K4G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
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