參數(shù)資料
型號(hào)： K9K2G16U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁(yè)數(shù)： 32/40頁(yè)
文件大?。?/td> 641K
代理商： K9K2G16U0M
FLASH MEMORY
32
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read mode.This operation is also initiated by writing 00h-30h to the command
register along with five address cycles. In two consecutive read operations, the second one doesn’t need 00h command, which five
address cycles and 30h command initiates that operation. Once the command is latched, it does not need to be written for the follow-
ing page read operation. Two types of operations are available : random read, serial page read .
The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device) of
data within the selected page are transferred to the data registers in less than 25
μ
s(t
R
). The system controller can detect the comple-
tion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be
read out in 80ns(1.8V device) or 50ns(3.3V device) cycle time by sequentially pulsing RE. The repetitive high to low transitions of the
RE clock make the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
Address(5Cycle)
00h
Col Add1,2 & Row Add1,2,3
Data Output(Serial Access)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
RE
t
R
30h
I/Ox
相關(guān)PDF資料
PDF描述
K9W4G08U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M ER 19C 19#12 SKT PLUG
K9K2G16Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K4G08U1M 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G16U0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K4G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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