參數(shù)資料
型號: K9S1208V0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64MB & 128MB SmartMediaTM Card
中文描述: 64MB的
文件頁數(shù): 12/37頁
文件大?。?/td> 657K
代理商: K9S1208V0
SmartMedia
TM
12
K9S1208V0M/A-SSB0
K9D1G08V0M/A-SSB0
AC Characteristics for Operation
NOTE
: 1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
CLE to RE Delay
t
CLR
10
-
ns
ALE to RE Delay
t
AR
10
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
30
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
50
-
ns
RE Access Time
t
REA
-
35
ns
RE High to Output Hi-Z
t
RHZ
15
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE High Hold Time
t
REH
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(1)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
WE High to RE Low
t
WHR
60
-
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
5/10/500
(3)
μ
s
AC Timing Characteristics for Command / Address / Data Input
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
CLE setup Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE setup Time
t
CS
0
-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
10
-
ns
Write Cycle Time
t
WC
50
-
ns
WE High Hold Time
t
WH
15
-
ns
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
μ
s
Dummy Busy Time for Multi Plane Program
t
DBSY
1
10
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
1
cycle
Spare Array
-
-
2
cycles
Block Erase Time
t
BERS
-
2
3
ms
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