參數資料
型號： KFG1216D2A-DIB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數： 90/114頁
文件大?。?/td> 1382K
代理商： KFG1216D2A-DIB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
90
4.1 Absolute Maximum Ratings
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V@1.8V device, 1.8V@2.65V/
3.3V device). Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc (for 1.8V)
-0.5 to + 2.45
V
Vcc (for 2.65V/3.3V)
-0.5 to + 4.6
All Pins
V
IN
(for 1.8V)
V
IN
(for 2.65V/3.3V)
-0.5 to + 2.45
-0.5 to + 4.6
Temperature Under Bias
Extended
T
bias
-30 to +125
°
C
Industrial
-40 to +125
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Recommended Operating Temperature
T
A
(Extended Temp.)
-30 to +85
°
C
T
A
(Industrial Temp.)
-40 to +85
4.2 Operating Conditions
4.0 DC CHARACTERISTICS
Voltage reference to GND
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
For 2.65V and 3.3V device, the system power should reach 2.2V after POR triggering level(typ. 1.8V) within 400us.
2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
Parameter
Symbol
1.8V Device
2.65V Device
3.3V Device
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC-
core / Vcc
1.7
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
V
CC-
IO / Vccq
V
SS
0
0
0
0
0
0
0
0
0
V
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