參數(shù)資料
型號(hào)： KFG1216Q2A-FIB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 60/114頁
文件大?。?/td> 1382K
代理商： KFG1216Q2A-FIB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
60
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using
the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command)
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be
changed with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.
Unlock Command Sequence:
Start block address+Unlock block command (0023h)
Unlocked
3.4.3.2 Locked NAND Array Write Protection State
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked
blocks can be changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or
locked-tight using the appropriate software command.
Lock Command Sequence:
Start block address+Lock block command (002Ah)
Locked
3.4.3.1 Unlocked NAND Array Write Protection State
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KFG1216Q2A-FID5 FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216Q2A-FID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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