參數(shù)資料
型號: KFG1216Q2A-FIB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 88/114頁
文件大?。?/td> 1382K
代理商: KFG1216Q2A-FIB6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
88
Invalid Block Table Creation Flow Chart
Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for
the actual data.
The following possible failure modes should be considered to implement a highly reliable system.
In the case of a status read failure after erase or program, a block replacement should be done. Because program status failure
during a page program does not affect the data of the other pages in the same block, a block replacement can be executed with a
page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced
block.
Block Failure Modes and Countermeasures
Failure Mode
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Single Bit Failure in Load Operation
Error Correction by ECC mode of the device
3.14.2 Invalid Block Replacement Operation
*
Check "FFFFh" at the 1st word of sector 0
in 1st and 2nd page of every block
Start
Set Block Address = 0
Check
"FFFFh"
Increment Block Address
Last Block
End
No
Yes
Yes
Create (or update)
Invalid Block(s) Table
No
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